9th Annual Non-Volatile Memory Technology Symposium

Technical Session -- Metal Oxide Resistive Memory

Schedule     Technical Sessions     Keynote Speaker     Invited Speakers    Tutorial

Session Chair
Dr. Darrell Rinerson, Unity Semiconductor
Click on a talk title to view its abstract if available
Thermal properties of TiO2 conduction and memristive switching
Julien L. Borghetti
Information and Quantum Systems Lab
Hewlett-Packard Laboratories
Fast resistance switching of TiO2 thin films for non-volatile memory applications (RRAM)
C. Kügeler
Institute of Solid State Research (IFF)
Research Center Jülich
Oxide based RRAM for high density and Metal electrode effects on the resistive switching property of NiO
C. B. Lee
Oxide Device Group
Samsung Advanced Institute of Technology
Scalable Non-Volatile Cross-Point Memory Technology based on Oxide Dual-Layer Memory Elements
Rene Meyer
Unity Semiconductor Corporation
Nanoscale resistive switching in thin films of SrTiO3 and TiO2
Ruth Muenstermann
Institute of Solid State Research
Research Center Juelich
Switching dynamics of TiO2 crossbar devices for resistance change memory
Matthew Pickett
Hewlett-Packard Laboratories
First-principle study of resistance switching in rutile TiO2 with oxygen vacancy
Seong-Geon Park
Stanford University
Spatially-resolved, x-ray based spectroscopy of metal/oxide/metal switches
J.P. Strachan
Information and Quantum Systems Lab
Hewlett-Packard Laboratories
Electroforming mechanism of metal/oxide/metal memristive switches
J. J. Yang
Hewlett-Packard Laboratories