9th Annual Non-Volatile Memory Technology Symposium

Technical Session -- Phase Change Memory

Schedule     Technical Sessions     Keynote Speaker     Invited Speakers    Tutorial

Session Chairs
Dr. Ilya Karpov, Intel
Dr. Luping Shi, Data Storage Institute
Click on a talk title to view its abstract if available
Nanowire Phase Change Memory (Invited)
Prof. Ritesh Agarwal
University of Pennsylvania
Thermal Phenomena in Phase Change Memory Devices(Invited)
Prof. Ken Goodson
Stanford University
Phase Change Memory Parameters: Effects of Atomic Transformations(Invited)
Dr. Ilya Karpov
Intel Corp.
Phase Change with Artificial Structure for Data Storage(Invited)
Dr. Luping Shi
Data Storage Institute
Phase Change Materials: The Importance of Resonant Bonding(Invited)
Prof. Matthias Wuttig
Aachen University
Local Structural Order Of The Amorphous Phases Of Ge-Sb-Te Phase-Change-Memory Alloys
Dave Baker
Department of Physics, Colorado School of Mines
Golden, Colorado
Optimization of Phase Change RAM Write Performance for Large Memory Array
Jan Boris Philipp,
Qimonda AG,
In-situ Characterization of a Phase-Change Memory Device by TEM-STM
Dongkyu Cha
Department of Material Science and Engineering
The University of Texas at Dallas
Richardson, TX
Snapback and Overprogramming Modeling in ANSYS
Frederick T. Chen
Industrial Technology Research Institute
Hsinchu, Taiwan
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays
Andrea Chimenton
University of Ferrara, Italy
Theoretical Study of 121Sb NMR in Crystalline and Amorphous Sb2Te3 and G2S2T5 (x=4,5,7)
Arthur H. Edwards
Air Force Research Laboratories, Space Vehicle Directorate
Kirtland AFB, NM
Recovery and other effects of annihilation of high current density filaments after switching in chalcogenide alloys
S. A. Kostylev
In situ and ex situ TEM study of switching in lateral phase-change memory cells
Stefan Meister
Stanford University
A 4-Mbit Non-Volatile Chalcogenide Random Access Memory Designed for Space Applications: Project Status Update
John Rodgers
BAE Systems
Characterizing the Chemical and Structural Effects of Processing on Nitrogen Doped Ge2Sb2Te5
Joseph Washington
Physics Department, North Carolina State University