Program -- Tutorial
We are very pleased this year to offer a tutorial on Non-Volatile Memory Technologies. This tutorial will be led by Dr.
Krishna Parat from Intel and will be held from 4:00 pm to 6:00 pm on Nov 11th (The first day of the symposium). The goal of this session will be to provide students and post-doctoral researchers with a foundation knowledge
of the current status and future of the field of non-volatile memory research. While the tutorial is aimed at junior researchers, it is open to all attendees.
In order to attend the tutorial you will need to indicate your interest on your registration form. A separate fee of $30.00 will be charged for
attendance at the tutorial.
Intel Corp.
Tutorial on Non-Volatile Memory Technologies
Dr. Krishna ParatIntel Corp.
This tutorial will give an overview of the Non-Volatile Memory (NVM)
Technologies. The dominant NVM today are the NAND and NOR Flash.
Within the NOR Flash there are Floating Gate storage as well as Nitride
storage memories. We will discuss the basic operation of these various types
of NVMs and the key device/product engineering considerations as well as
Multi-level Cell technology.
While the Flash bit area/density has scaled by >1000X over the past
several years, there are several scaling issues - some physical and
some electrical - that need to be overcome to continue the same rate of
scaling into the future. Some of these issues can be addressed using
some evolutionary approaches such as high-K inter-poly-dielectrics or
trap based charge storage devices. These schemes will be discussed.
Additionally, there are several other emerging memory cells as well
that hold promise for superior performance and scaling. These include Phase
Change Memory (PCM), Resistive RAMs (RRAM), Magnetic RAMs (MRAMs),
etc. We will also discuss some of these emerging memories.